Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 1. P. 039-043.
DOI: https://doi.org/10.15407/spqeo19.01.039

Features of tensoresistance in single crystals of germanium and silicon with different dopants
P.I. Baranskii1, G.P. Gaidar2

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03680 Kyiv, Ukraine
2Institute for Nuclear Research, National Academy of Sciences of Ukraine, 47, prospect Nauky, 03680 Kyiv, Ukraine; e-mail: gaydar@kinr.kiev.ua

Abstract. Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of X /0 = f (X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.

Keywords: germanium, silicon, dopant impurity, tensoresistance, anisotropy parameter of mobility.

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