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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 19 N 1
DOI: https://doi.org/10.15407/spqeo19.01

Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
P.V. Parphenyuk, A.A. Evtukh
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 001-008.
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Electron transport through nanocomposite SiO2(Si) films containing Si nanocrystals
O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 009-013.
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Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation
G.V. Milenin, R.A. Red'ko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 014-022.
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└utomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals
G.S. Pekar, └.└. Singaevsky, └.F. Singaevsky
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 023-027.
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Search of mode wavelengths in planar waveguides by using the wave equation Fourier transform method
V.M. Fitio, V.V. Romakh, Ya.V. Bobitski
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 028-033.
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Acoustic-stimulated relaxation of GaAs1ľ§P§ LEDs electroluminescence intensity
O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 034-038.
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Features of tensoresistance in single crystals of germanium and silicon with different dopants
P.I. Baranskii, G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 039-043.
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Temperature effect on light polarization in uniaxial crystals
M.R. Kulish, V.M. Litvinova, M.I. Malysh, I.O. Sokolovskyi
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 044-046.
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Speckle pattern formation in spatially limited optical systems
M.M. Kotov, V.N. Kurashov, A.A. Goloborodko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 047-051.
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Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface
S.V. Sologub, I.V. Bordenyuk, O.V. Kanash, R.H. Amirov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 052-056.
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Optical properties of graphene film growing on a thin copper layer
T.S. Rozouvan, L.V. Poperenko, V.G. Kravets, I.A. Shaykevich
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 057-061.
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Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 062-066.
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Analysis of the silicon solar cells efficiency. Type of doping and level optimization
A.V. Sachenko, V.P. Kostylyov, M.V. Gerasymenko, R.M. Korkishko, M.R. Kulish, M.I. Slipchenko, I.O. Sokolovskyi, V.V. Chernenko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 067-074.
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Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 075-078.
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Electrical and optical parameters of Cu6PS5I-based thin films deposited using magnetron sputtering
I.P. Studenyak, A.V. Bendak, V.Yu. Izai, P.P. Guranich, P. Kus, M. Mikula, B. Grancic, M. Zahoran, J. Gregus, A. Vincze, T. Roch, T. Plecenik
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 079-083.
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Optimization of surface plasmon resonance based biosensor for clinical diagnosis of the EpsteinľBarr herpes virus disease
R.V. Khrystosenko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 084-089.
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Microanalysis of magnetic structure of yttrium-iron garnet films by scanning probe microscopy methods
O.I. Synhaivska, P.M. Lytvyn, I.P. Yaremiy, A.O. Kotsyubynsky, V.V. Kozub, V.S. Solnstev, I.V. Prokopenko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 090-097.
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Electronic structure of 2H-SnSe2: ab initio modeling and comparison with experiment
D.I. Bletskan, K.E. Glukhov, V.V. Frolova
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 098-108.
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Carbon ceramics from plants: Graphitization of biomorphic matrixes
D.A. Iarmolenko, A.E. Belyaev, V.S.Kiselov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 109-115.
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The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.1. P. 116-123.
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Publication Ethics and Publication Malpractice Statement  P. 124. (PDF)

Contents P. 125. (PDF)