Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 1. P. 062-066.
DOI: https://doi.org/10.15407/spqeo19.01.062

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
S.I. Vlaskina1,2, G.N. Mishinova3, V.I. Vlaskin4, V.E. Rodionov2, G.S. Svechnikov2

1Yeoju Institute of Technology (Yeoju University), 338, Sejong-ro, Yeoju-eup, Yeoju-gun, Gyeonggi-do, 469-705 Korea
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: businkaa@mail.ru
3Taras Shevchenko Kyiv National University, 64, Volodymyrs’ka str., 01033 Kyiv, Ukraine
4Sensartech, 2540 Lobelia Dr., Oxnard, 93036 California, USA

Abstract. Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements.

Keywords: photoluminescence spectra, SiC crystals and thin films, phase transformations, in-grown defects.

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