Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (1), P. 079-084 (2017).

Determination of fundamental optical constants of Zn2SnO4 films
A.O. Salohub1, A.A. Voznyi1, O.V. Klymov2, N.V. Safryuk3, D.I. Kurbatov1, A.S. Opanasyuk1

1Sumy State University, 2, Rymskogo-Korsakova str., 40007 Sumy, Ukraine E-mail:,
2ISOM and Dpto. de Ingeniería Electrónica Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, Ukraine

Abstract. Examined in this paper have been optical properties of polycrystalline films Zn2SnO4 deposited using the spray pyrolysis method within the range of substrate temperatures 250 °C to 450 °C in increments of 50 °C. The spectral dependences have been found for the following physical quantities: k(), n(), ε1(), ε2() and defined as they change under the influence of substrate temperature Тs. Moreover, using the model by Wemple–DiDomenico it was calculated the dispersion energy Ео and Ed for this oxide. Two independent methods defined band gaps Zn2SnO4, which decreases from 4.21…4.22 eV down to 4.04…4.05 eV with increasing Тs from 250 °C up to 450 °C.

Keywords: thin film, stannate zinc, spray pyrolysis, optical property, band gap, dispersion parameters.

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