Semiconductor Physics, Quantum Electronics & Optoelectronics. 2017. V. 20, N 1. P. 105-109.
DOI: https://doi.org/10.15407/spqeo20.01.105


Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
S.V. Stariy, A.V. Sukach, V.V. Tetyorkin, V.O. Yukhymchuk, T.R. Stara

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Ukraine Phone (38 044) 525-54-61, e-mail: teterkin@isp.kiev.ua

Abstract. InSb wafers of n-type conductivity were annealed at 300, 370 and 400 °C for 30 min in an open tube system under flowing argon ambient. The conductivity type conversion are revealed for the first time in samples with the electron concentration ~1.0•1014 cm–3 for all annealing temperatures. Experimental evidences have been obtained that this phenomenon has a bulk character. In annealed samples the spectral response exhibits pronounced increase in the short-wave region. The effect of annealing on electrical and photoelectrical properties of n-InSb has been explained by formation of InSb antisites.

Keywords: InSb, thermal annealing, conductivity type conversion, native defects, indium antisites.

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