Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (1), P. 16-21 (2021).

Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime
A. Latreche

LPMRN Laboratory, Department of Materials Science, Faculty of Sciences and Technology,
University of Mohamed El Bachir El Ibrahimi,
Bordj-Bou-Arreridj 34030, Algeria
E-mail: hlat26@

Abstract. In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.

Keywords: tunneling current, field emission, thermionic–field emission, Schottky diode, image force barrier lowering, trapezoidal barrier.

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