Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (1), P. 48-55 (2021).
DOI: https://doi.org/10.15407/spqeo24.01.048
Formation of laterally ordered arrays of noble metal nanocavities
for SERS substrates by using interference photolithography
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Abstract.
Using laterally ordered arrays of noble metal nanocavities as SERS substrates
has been examined theoretically and experimentally. Simulation of the distribution of the
electric field at the surface of nanostructures (nanocavities) has been carried out. The
simulation results showed that cavities can be formed not only in a metal layer but in
semiconductor or dielectric layers and then covered with a layer of a plasmon-supporting
metal (silver or gold) 20…100-nm thick. In our work, chalcogenide glass has been used as
a relief-forming layer. This paper presents the results of development and optimization of
processes providing formation of SERS substrates as two-dimensional arrays of noble
metal nanocavities by using interference photolithography based on a two-layer
chalcogenide photoresist. Prototypes of SERS substrates were made as substrates with
different spatial frequencies (from 1200 to 800 mm -1 ) and depths of nanocavities (from 250
up to 500 nm). It was shown that the use of such nanocavities with the sizes larger than
500 nm enables to efficiently analyze the structure of macromolecules by using surface-
enhanced Raman light scattering spectroscopy, since these macromolecules completely
overlap with the regions of enhanced electric field inside the nanocavities. Technology of
interference lithography based on two-layer chalcogenide photoresists makes it possible to
form effective SERS substrates in the form of laterally ordered arrays of nanocavities with
specified morphological characteristics (spatial frequency, nanocavity sizes, composition
and thickness of a conformal metal coating) for detecting high-molecular compounds.
Keywords: SERS, interference lithography, chalcogenide photoresist, noble metal
nanocavities.
V.A. Dan’ko1 ,
I.Z. Indutnyi1 ,
V.I. Mynko1 ,
P.M. Lytvyn1 ,
M.V. Lukaniuk1 ,
H.V. Bandarenka 2 ,
A.L. Dolgyi2 ,
S.V. Redko2
41, prospect Nauky, 03680 Kyiv, Ukraine
2Belarusian State University of Informatics and Radioelectronics,
6, P. Brovki str., 220013 Minsk, Belarus
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