Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (1), P. 058-067 (2022).

Silicon nanowire arrays synthesized using the modified MACE process: Integration into chemical sensors and solar cells
M.G. Dusheiko, V.M. Koval, T.Yu. Obukhova

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”,
Microelectronic department
37, prospect Peremohy, 03056 Kyiv, Ukraine

Abstract. In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm2). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5…2.75 mA/V·%.

Keywords:metal-assisted chemical etching, silicon nanowires, sensors, solar cells.

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