Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (1), P. 108-112 (2022).

The silicon model photonic structure for a full-function thermal photodetector
K.V. Andrieieva, L.A. Karachevtseva, K.P. Konin*, A.I. Liptuga, O.O. Lytvynenko, D.V. Morozovska

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
41, prosp. Nauky, 03680 Kyiv, Ukraine
*Corresponding author: e-mail:

Abstract. The out-of-plane optical properties of a combined one-two-dimensional comb-type photonic structure based on macroporous silicon under illumination with polarized normally incident light have been experimentally investigated. Technologically simple quasi-periodic structure with parallel air grooves in the form of mutually overlapping macropores (i.e., one-dimensional air/Si type structure) together with macropores arbitrarily distributed over the crystal surface (two-dimensional air/Si structure) was studied in comparison with the calculated one-dimensional periodic metal lattice on silicon. It is shown that this combined air/Si photonic structure has significant polarization selectivity and can serve as a basis for developing the full-function out-of-plane thermal photodetector on macroporous silicon.

Keywords:thermal photodetector, macroporous silicon, polarization-sensitive device.

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