Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (1), P. 005-016 (2022).
DOI: https://doi.org/10.15407/spqeo26.01.005
Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination
in the space charge region
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine Abstract.
Theoretical modeling of the optical and photovoltaic characteristics of highly efficient textured silicon solar cells (SC), including short-circuit current, open-circuit voltage and photoconversion efficiency, has been performed in this work. In the modeling, such recombination mechanisms as non-radiative exciton recombination relative to the Auger mechanism with the participation of a deep recombination level and recombination in the space charge region (SCR) was additionally taken into account. In a simple approximation, the external quantum efficiency of the photocurrent for the indicated SC in the long-wavelength absorption region has been simulated. A theory has been proposed for calculating the thickness dependences of short-circuit current, open-circuit voltage and photoconversion efficiency in them. The calculated dependences are carefully compared with the experimental results obtained for SC with the p+-i-?-Si:H/n-c-Si/i-n+-?-Si:H architecture and the photoconversion efficiency of about 23%. As a result of this comparison, good agreement between the theoretical and calculated dependences has been obtained. It has been ascertained that without taking into account recombination in SCR, a quantitative agreement between the experimental and theoretical light I V characteristics and the dependence of the output power in the SC load on the voltage on it cannot be obtained. The proposed approach and the obtained results can be used to optimize the characteristics of textured SC based on monocrystalline silicon.
Keywords:silicon solar cell, theoretical modeling, external quantum efficiency of the photocurrent, short-circuit current, open-circuit voltage, photoconversion efficiency.
A.V. Sachenko1,
V.P. Kostylyov1,
V.M. Vlasiuk1,
I.O. Sokolovskyi1,
M.A. Evstigneev2,
T.V. Slusar3,
V.V. Chernenko1
2Department of Physics and Physical Oceanography, Memorial University of Newfoundland,
St. John’s, NL, A1B 3X7, Canada
3Electronics and Telecommunications Research Institute, 218, Gajeong-ro, Yuseong-gu, Daejeon 34129, South Korea
Corresponding author e-mail: viktorvlasiuk@gmail.com
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.