Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (1), P. 017-024 (2022).

Integrated dynamical phase-variation diffractometry of single crystals with defects of three and more types

V.B. Molodkin1, V.Yu. Storizhko2, V.P. Kladko3, V.V. Lizunov1, A.I. Nizkova1, A.Yo. Gudimenko3, S.I. Olikhovskii1, M.G. Tolmachev1, S.V. Dmitriev1, I.I. Demchyk1*, E.I. Bogdanov1, B.I. Hinko1

1G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine,
36, Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
2Institute of Applied Physics, NAS of Ukraine, 58, Petropavlivs’ka str., 40000 Sumy, Ukraine
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prosp. Nauky, 03680 Kyiv, Ukraine
*Corresponding author e-mail:

Abstract. Generalization of the methods for the purposeful influence of the interrelated variations inherent to different experimental conditions on changes in the selectivity of the sensitivity of the azimuthal dependence of the total integrated intensity of dynamical diffraction to various types of defects in single crystals has been carried out. As a result, the improved phase-variation methods with additionally increased sensitivity and informativity of non-destructive structural diagnostics aimed at multi-parametrical single crystal systems have been developed.

Keywords:phase variation diagnostics, azimuthal dependence, defects.

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