Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (1), P. 030-035 (2023).
DOI: https://doi.org/10.15407/spqeo26.01.030

Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study

D.V. Savchenko 1,2,*, D.M. Yatsyk 1, O.M. Genkin 1, Yu.F. Nosachov 1, O.V. Drozdenko 1, V.I. Moiseenko1, E.N. Kalabukhova3

1National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”
37, prosp. Peremohy, 03056 Kyiv, Ukraine
2Institute of Physics of the CAS, 2 Na Slovance, 182 21 Prague, Czech Republic
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prosp. Nauky, 03680 Kyiv, Ukraine
*Corresponding author e-mail: dariyasavchenko@gmail.com

Abstract. The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration ND – NA) ? 1•1017 ...4•1019 cm –3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (?1) and electron hopping over nitrogen donors in the D0 bands (?3) were determined. It was found that in 6H-SiC ?1 = 50 meV for (ND – NA) ? 1•10 17 cm –3 , ?1 = 32 meV and ?3 = 6 meV for (ND – NA) ? 1•1019cm–3 , ?1 = 13.5 meV and ?3 = 3.5 meV for ((ND – NA) ? 4•1019 cm–3.

Keywords:conductivity, SiC, cavity perturbation method, activation energy.

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