¹1 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prosp. Nauky, 03680 Kyiv, Ukraine
²Institute for Information Recording, NAS of Ukraine, 2, Shpak str., 03113 Kyiv, Ukraine
³Technical Center NAS of Ukraine, 13, Pokrovskaya str., 04070 Kyiv, Ukraine
*Correspondence author e-mail: nazarmazur1994@gmail.com

Abstract. The effect of plasmonic nanostructures (NSs) on the Raman spectra and underlying structural changes in thin chalcogenide films is investigated. Several tens of nanometers thick As 2 S 3 and Se films were deposited by thermal sputtering on glass and surface-enhanced Raman spectroscopy (SERS) substrates based on gold nanostructures for comparison. The films on glass were practically not detectable by the Raman spectroscopy. Using gold NSs as the substrates enabled reliable registration of the Raman spectra of both the As 2 S 3 and Se films. The registered Raman spectra contained all the features usually present in the films with the thicknesses ~1 ?m or more. Based on our analysis of the spectra obtained at different excitation wavelengths, we may conclude that the SERS chemical mechanism makes the main contribution to the enhancement of the Raman signal from chalcogenide films. Adjustment of the parameters of SERS substrates to tune their plasmon band position in resonance with the excitation laser radiation enables increasing the plasmonic enhancement contribution. Besides the effect of enhancement, localized plasmon resonance in the gold NSs causes local heating of the chalcogenide film around them leading to local structural transformations, which can be controlled using the Raman spectra.

Keywords:Raman scattering, SERS, thin films, arsenic sulphide, selenium, gold nanostructures.

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