Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (1), P. 089-096 (2023).
Investigation of gamma-ray sensitivity of YAG:Ce based scintillation structures
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prosp. Nauky, 03680 Kyiv, Ukraine Abstract.
Ionizing radiation is widely used nowadays for diagnosing and probing a wide
range of objects due to the high reliability and quality of the results obtained in such
research. Use of highly sensitive ionizing radiation sensors enables the reduction of the
radiation dose involved in the research. Moreover, sensitive systems for monitoring
environmental parameters may be also created based on such sensors. In this work, the
efficiency of a low density radiation detector with the composite scintillation structure
based on powdery YAG:Ce phosphor as the converting coating of photosensitive detector
was investigated. The possibility to detect gamma radiation from the 241 Am and 137 Cs based
sources by the ionizing radiation detector comprising YAG:Ce 3+ composite converting
scintillation structure and micropixel avalanche photodiode (MAPD) was found. The
number of detected gamma rays emitted by the
241 Am source was shown to increase
linearly with the thickness of the composite converting scintillation structure. The thickness
of the composite converting scintillation structure of 495 µm was found to enable
registration of gamma-rays with the energies in the range of 26 to 662 keV.
Keywords:ionizing radiation, scintillation structure, YAG:Ce phosphor, low density
radiation detector. This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
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