Abstract

Semiconductor Physics, Quantum Electronics & Optoelectronics, 27 (1), P. 079-089 (2024).
DOI: https://doi.org/10.15407/spqeo27.01.079

Difference in the structure and morphology of CVD diamond films grown on negatively charged and grounded substrate holders: Optical study

Iu.M. Nasieka^1,2*, V.E. Strelnitskij³, O.A. Opalev³, V.I. Gritsina³, K.I. Koshevyi³, O.Ya. Horobei¹, V.V. Lementaryov², V.I. Trokhaniak², M.I. Boyko¹

¹V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prosp. Nauky, 03680 Kyiv, Ukraine
²National University of Life and Environmental Sciences of Ukraine, 12, Heroyiv Oborony str., 03041 Kyiv, Ukraine
³National Science Center “Kharkov Institute of Physics and Technology”, 1, Akademichna str., 61108 Kharkiv, Ukraine
*Corresponding author e-mail: yunaseka@gmail.com

Abstract. Microcrystalline diamond films were grown by plasma-enhanced chemical vapor deposition from a CH4/H2 gas mixture on Si single-crystalline substrates placed on negatively charged and grounded substrate holders. The obtained diamond films had the (100) predominant faceting of microcrystals. The film structure and morphology were analyzed by scanning electron microscopy, photoluminescence, Raman and FTIR spectroscopies. The main physical factor causing the difference in the structure of the diamond films grown on the grounded and charged substrate holders was found to be the flow of low-energy (up to 200 eV) Si+, N2+, H, O ions in the latter holder. These ions predominantly embedded into the structure of the diamond films grown on the charged substrate holder leading to appearance of residual mechanical stress up to 2 GPa. Ion bombardment led to increase in the volume fraction of non-diamond carbon component in the film grain boundaries, decrease in sp3-bonded carbon fraction and reduction of the diamond microcrystals lateral size. Larger amount of grain boundaries in the diamond films grown on the charged substrate holder promoted diffusion of Si atoms from the substrate to the plasma and growing film surface, inducing formation of SiV centers in the diamond microcrystals even in the 150…200 µm thick films. The concentration of Si-related defects was much smaller in the films grown using the grounded substrate holder. These films had substantially smaller volume fraction of graphite-like carbon in the grain boundaries and were more homogeneous.

Keywords:diamond films, PECVD method, photoluminescence, Raman scattering, SiV center.

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