Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (1), P. 036–039 (2026).
DOI: https://doi.org/10.15407/spqeo29.01.036
Probabilistic patterns in the formation of spectral curves of interband radiative recombination in semiconductors
G.V. Milenin1, R.A. Redko1,2,3,4*, S.V. Mamykin1
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine
2Department of Mathematics, Kyiv School of Economics, 3 Mykoly Shpaka Street, 03113 Kyiv, Ukraine
3Department of General Physics and Modeling of Physical Processes, National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, 37 Beresteyskyi Avenue, 03056 Kyiv, Ukraine
4State University of Information and Communication Technologies, 7 Solomenska Street, 03110 Kyiv, Ukraine
*Corresponding author e-mail: redko.rom@gmail.com
Abstract. The basic principles underlying a probabilistic concept for forming interband radiative recombination spectral profiles in semiconductors have been formulated and implemented. Analytical relations for the line shape (form-factor) of the spectral lines have been obtained. A good agreement between the theoretical predictions and experimentally measured radiative recombination spectra of indium phosphide based semiconductor compounds has been demonstrated.
Keywords: semiconductor, radiative recombination, spectral line, line shape (form-factor), Weibull–Gnedenko distribution.
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