https://doi.org/10.15407/spqeo2.01.025
PACS 71.35; 71.36; 78.20; S12
Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
N. I. Grigorchuk
Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 1. P.25-30. Eng. Il.: 1. Ref.: 21
Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton damping due to lattice imperfections is accounted for as a frequency independent parameter. The obtained analytical expressions allow analyses of the line-shape for different space dimensions of structure depending on bandwidth difference, damping parameter and temperature.
Keywords: low-dimensional organic crystals, light absorption, exciton transitions.
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