Optically controlled 2D tunnelling in GaAs delta-doped p-n junction S. A. Vitusevich , A. Forster, A. E. Belyaev, B. A. Glavin, K. M. Indlekofer, H. Luth, R.V. Konakova
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 007-010 (1999).
Amplification of localized acoustic waves by the electron drift in a quantum well A. A. Demidenko, V. A. Kochelap
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 011-024 (1999).
Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands N. I. Grigorchuk
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 025-030 (1999).
Saturation of optical absorption in CdS single crystals N. I. Malysh, V. P. Kunets, S. I. Valiukh, Vas. P. Kunets
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 031-034 (1999).
Photoluminescence excitation spectroscopy in narrow - gap Hg1 -x-y Cd x Mn y Te Yu. I. Mazur
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 035-041 (1999).
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds N. E. Korsunskaya, I. V. Markevich, B. R. Dzhumaev, L. V. Borkovskaya, M. K. Sheinkman
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 042-046 (1999).
Electro-physical properties of g-exposed crystals of silicon and germanium Yu. P. Dotsenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 047-055 (1999).
Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing L. I. Datsenko, J. Auleytner, A. Misiuk, V. P. Klad'ko, V. F. Machulin, J. Bak-Misiuk, D. Zymierska, I. V. Antonova, V. M. Melnyk, V. P. Popov, T. Czosnyka, J. Choinski
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 056-061 (1999).
Effect of annealing on activation of native acceptors in narrow-gap p -HgCdTe crystals V. V. Bogoboyashchiy
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 062-069 (1999).
Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films V. M. Mamikonova, F. D. Kasimov, G. P. Kemerchev
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 070-075 (1999).
Investigation of structural perfection of SiC ingots grown by a sublimation method S. F. Avramenko, V. S. Kiselev, M. Ya. Valakh, V. G. Visotski
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 076-079 (1999).
Dissolution of indium arsenide in nitric solutions
of the hydrobromic acid Z. F. Tomashik, S. G. Danylenko, V. N. Tomashik
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 080-083 (1999).
ENDOR study of irradiated tooth enamel S. Ishchenko, I. Vorona, S. Okulov
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 084-092 (1999).
Silicon-on-insulator technology for microelectromechanical applications A. Y. Usenko, W. N. Carr
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 093-097 (1999).
Radiation hardness of AlAs/GaAs-based resonant
tunneling diodes A. A. Belyaev, A. E. Belyaev, R. V. Konakova, S. A. Vitusevich, V. V. Milenin, E. A. Soloviev, L. N. Kravchenko, T. Figielski, T. Wosinski, A. Makosa
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 098-101 (1999).
IR sensor readout devices with source input circuits F. F. Sizov, V. P. Reva, Yu. P. Derkach, Yu. G. Kononenko, A. G. Golenkov, S. V. Korinets, S. D. Darchuk, D. A. Filenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 102-110 (1999).
Image formation properties of As40S20Se40 thin layers in application for gratings fabrication A. V. Stronski, M. Vlcek, P. E. Shepeliavyi, A. Sklenar, S. A. Kostyukevich
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 111-114 (1999).
Resistance thermometers based on the germanium films V. F. Mitin
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 115-123 (1999).
Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide Ye. F. Venger, V. V. Milenin, I. B. Ermolovich, R.V. Konakova, D. I. Voitsikhovskiy, I. Hotovy, V. N. Ivanov
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 124-132 (1999).
Iodine-stabilized He-Ne laser pumped by transverse rf-discharge O. V. Boyko, A. M. Negriyko, L. P. Yatsenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 133-141 (1999).
Influence of temporal parameters of laser irradiation on emission spectra of the evaporated material E. Zabello, V. Syaber, A. Khizhnyak
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 142-146 (1999).
Characteristics of thermal lens induced in active rod of cw Nd:YAG laser A. Khizhnyak, G. Galich, M. Lopiitchouk
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 147-152 (1999).
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique B. K. Serdega, E. F. Venger, E. V. Nikitenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 153-156 (1999).
Influence of absorption level on mechanisms of Bragg-diffracted x -ray beam formation in real silicon crystals V. P. Klad'ko, D. O. Grigoriev, L. I. Datsenko, V. F.Machulin, I. V. Prokopenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (1), P. 157-162 (1999).
