Photoluminescence excitation spectroscopy in narrow - gap Hg_1-x-yCd _xMn_yTe

_{Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 1. P.35-41. Eng. Il.: 4. Ref.: 28}

New results on infrared photoluminescence and photoluminescence excitation spectroscopy around the fundamental energy gap in Hg1-x-yCdxMnyTe single crystal are presented. A very strong electron-phonon coupling influencing the optical spectra of this narrow-gap semiconductor is found. An indirect «hot exciton» absorption under participation of longitudinal optical phonons occurs to be the main absorption mechanism. It was shown, that knowledge about the excitonic processes in wide gap semiconductors also can be applied to high-quality narrow-gap materials.

Keywords: photoluminescence excitation, «hot exciton», monitor position, longitudinal optical phonon.

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