https://doi.org/10.15407/spqeo2.01.093
PACS: 07.79.-v, 07.10.Pz,) 7.10 Cm, 07.07.Df, 85.40.Qx, 84.37.+q
Silicon-on-insulator technology for microelectromechanical applications
A. Y. Usenko, W. N. Carr
Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 1. P.93-97. Eng. Il.: 4. Ref.: 19
A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of SOI to fabricate advanced MEMS are given and future prospects MEMS on SOI are evaluated.
Keywords: micromechanical systems, silicon-on-insulator, sensors, review.
[Contents]
Full text in PDF (Portable Document Format) are available for free. [PDF 173K]
The copies of separate papers in PDF format can be ordered using the address
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.