https://doi.org/10.15407/spqeo3.02.121
PACS: 78.55.Cr,78.20.Ls,73.40.Kp
InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures
W.T. Masselink, H. Kissel, U.Mueller, C. Walther
Humboldt-Universitat zu Berlin, Dept. of Physics, Invalidenstrasse 110, D-10115 Berlin, Germany
Yu.I. Mazur, G.G .Tarasov, M.P. Lisitsa, S.R. Lavoric, Z.Ya. Zhuchenko
Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 03650 Kiev, Ukraine
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 121-125.
Abstract. Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures are studied. The size distribution of InAs quantum dots (QD's) is found to be bimodal at the higher substrate growth temperature (TG = 505 °C) and is transformed into multimodal for the decreased growth temperature (TG = 420 °C) and growth interruption applied. For the first time we demonstrate the strong coupling between modes, which stabilizes the PL magnitude and the full width at half maximum of large index QD modes within a certain temperature interval (50-150 K) due to feeding of the radiative transitions from non-radiative decay and carrier transfer arising from decaying excitonic states of the low index QD mode.
Keywords: quantum dots, InAs, GaAs, superlattice, photoluminescence
Paper received 02.09.99; revised manuscript received 11.11.99; accepted for publication 14.03.00.
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