Heterostructure infrared photodiodes Antoni Rogalski
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 111-120 (2000).
InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures W.T. Masselink, H. Kissel, U.Mueller, C. Walther, Yu.I. Mazur, G.G .Tarasov,
M.P. Lisitsa, S.R. Lavoric, Z.Ya. Zhuchenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 121-125 (2000).
Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects W.T. Masselink, H. Kissel, U.Mueller, C. Walther, Yu.I. Mazur,G.G .Tarasov, G.Yu. Rud'ko, M.Ya. Valakh,V. Malyarchuk, Z.Ya. Zhuchenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 126-137 (2000).
Photoresponse of Schottky-barrier detector under strong IR laser excitation S. Asmontas, D. Seliuta, E. Sirmulis
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 138-143 (2000).
Some features of two-photon absorption in static electric field V.M. Griban, O.V. Melnichuk, L.M. Ovander, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 144-149 (2000).
Excitonic effects in band-edge luminescence of semiconductors at room temperatures A.V. Sachenko, Yu.V. Kryuchenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 150-156 (2000).
Microstructure of the relaxed (001) Si surface A. E. Kiv, V. N. Soloviev, T. I. Maximova
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 157-160 (2000).
Radiation-induced changes in infra-red spectrum of black zinc diphosphide monocrystals A.P.Kudin
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 161-164 (2000).
Physical properties of ZnSe-MgSe, ZnSe-CdS solid solutions and possibilities of their application in IR engineering Yu.A. Zagoruiko, O.A. Fedorenko, N.O. Kovalenko, M.A. Rom, P.V. Mateychenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 165-169 (2000).
Induced polar materials for intense radiation monitoring I.V. Blonsky, V.F. Kosorotov, L.V. Shchedrina, L.V. Levash
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 170-173 (2000).
Calculation of absorption coefficients of InSb1-xBix solid solutions J.I. Vyklyuk, V.G. Deibuk, I.M. Rarenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 174-177 (2000).
The effect of oxygen-containing anions on luminescent properties of CsI L.N.Shpilinskaya, B.G.Zaslavsky, L.V.Kovaleva, S.I.Vasetsky, A.M.Kudin, A.I.Mitichkin, T.A.Charkina
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 178-180 (2000).
Functionally graded PbTe-based compound for thermoelectric applications Z. Dashevsky, M.P. Dariel, S. Shusterman
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 181-184 (2000).
Optical properties and fine faulty structure of sapphire crystals grown in low pressure CO gas atmosphere V.M.Puzikov, A.Ya.Dan'ko, G.T.Adonkin, N.S.Sidel'nikova, V.F.Tkachenko, A.T.Budnikov
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 185-190 (2000).
Small-grained detector of ionizing radiation based on ZnSe(Te) V.G.Volkov, V.P.Gavrilyuk, L.P.Gal'chinetskii, B.V.Grinyov, K.A.Katrunov, V.D.Ryzhikov.
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 191-194 (2000).
Specificity of high-pure monocrystalline silicon production for various registering and converting devices Yu.V.Trubitsyn, S.V. Zverev
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 195-199 (2000).
Rapidly grown KDP crystals V.I. Salo
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 200-202 (2000).
Effect of growth conditions on structure quality of KDP crystals V. I. Salo, V. F. Tkachenko, M. I. Kolybayeva, I. M. Pritula
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 203-206 (2000).
Scintillation characteristics of the single crystalline CdWO4 and Bi4Ge3O12 compounds doped with mercury-like ions Yu. Zorenko, L.Limarenko, I. Konstankevych, M. Pashkovsky, Z. Moroz, I. Solsky,
B. Grinev, V. Nekrasov, Yu. Borodenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 207-212 (2000).
Application of scintillators based on single-crystalline Lu3Al5O12:Ce3+ films for radiation monitoring in biology and medicine Yu. Zorenko, V. Gorbenko, I. Konstankevych, B. Grinev, M. Globus, M. Batentschuk
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 213-218 (2000).
New possibility of retrospective EPR dosimetry I. Vorona, S. Ishchenko, S. Okulov, T.T. Petrenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 219-222 (2000).
Manufacture and study of new polystyrene scintillators V.G. Senchishin, V.L. Vasilchuk, A.Yu. Borisenko, V.N. Lebedev, A.F. Adadurov, N.P. Khlapova,V.D.Titskaja, V.S. Koba, L.E. Pelipyagina, L.A. Miroshnichenko, V.E. Leman, V.N. Osadchenko, N.A. Kluban, V.G. Shydlovskij, L.I. Mitsaj
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 223-226 (2000).
Thermostimulated luminescence and the temperature dependence of X-ray luminescence of the Li2B4O7 single crystals B.M.Hunda, P.P.Puga, A.M.Solomon, V.M.Holovey
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 227-232 (2000).
Scintillators based on zinc selenide and ticor for detection of charged particles V.D.Ryzhikov, E.A.Danshin, N.G.Starzhinski, E.A.Losseva, V.V.Chernikov, L.A.Litvinov
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 233-236 (2000).
Advanced scintillation single crystals based on complex oxides with large atomic number S.F. Burachas, L.L. Nagornaya, G.M. Onishchenko, L.A. Piven', E.N. Pirogov, V.D. Ryzhikov
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 237-239 (2000).
Radioluminescent, thermoluminescent and dosimetric properties of X-ray phosphors M. Ignatovych, A. Kelemen, N. Otvas, A. Peto, V. Ogenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 240-243 (2000).
Multiwave laser source for simultaneous sounding ozone and critically related to ozone chemicals S.M.Baschenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 244-246 (2000).
Strong thermostable interference coatings for IR optical elements Yu.A.Zagoruiko, O.A.Fedorenko, N.O.Kovalenko, P.V.Mateychenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 247-250 (2000).
Recording of rainbow holograms using As2Se3 amorphous layers V.I. Min'ko, I.Z. Indutnyy, P.F. Romanenko, A.A. Kudryavtsev
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 251-253 (2000).
New interpretation of the boundary diffracted wave origin S.P. Anokhov
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 254-257 (2000).
Simulation of obliquely incident light propagation through a general twisted nematic liquid crystal cell by the Jones matrix technique S. Valyukh, A. Slobodyanyuk, V. Sorokin
Semiconductor physics, quantum electronics and optoelectronics, 3 (2), P. 258-263 (2000).
