https://doi.org/10.15407/spqeo3.02.150
PACS: 71.35.- y, 72.20.J, 78.55.J, 78.60.J
Excitonic effects in band-edge luminescence
of semiconductors at room temperatures
A.V. Sachenko, Yu.V. Kryuchenko
Institute of Semiconductor Physics of NASU, prospect Nauki 45, Kiev, 03028, Ukraine
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 150-156.
Abstract. A theoretical analysis is developed for ascertaining the influence of exciton states on edge luminescence in different semiconductors at high temperatures and high levels of excitation. Screening effects and the Mott transition for excitons have been taken into account using simple relations obtained with a variational method. Dependencies of luminescence quantum efficiency on excitation level are discussed. A mechanism of exciton non-radiative annihilation due to Auger recombination via deep impurity levels is analysed as well. It is shown that the probability of this process decreases with an energy of exciton binding.
Keywords: room-temperature exciton luminescence, high excitation levels, quantum efficiency, exciton nonradiative annihilation, Auger mechanism.
Paper received 10.09.99; revised manuscript received 15.12.99; accepted for publication 14.03.00.
[Contents]
Full text in PDF (Portable Document Format) are available for free. [PDF 136K]
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.