Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (2), P. 161-164 (2000)
https://doi.org/10.15407/spqeo3.02.161 PACS: 78.03.- j, 78.40.- q, 72.20.- i Radiation-induced changes in infra-red spectrum A.P.Kudin Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 161-164. Abstract. For the first time the effect of ionizing particles of different type (gamma-quanta, electrons) and neutrons upon infra-red spectra of zinc diphosphide has been studied. It was shown that the defects of phosphorus sublattice, that are the principal centers of optical activity in the infra-red (IR), are responsible for structural evolution of zinc diphosphide crystals in the process interaction with radiation of different types. Keywords: radiation, defects, exciton, annealing, spectral curve, absorption, phosphrous chain. Paper received 17.09.99; revised manuscript received 14.11.99; accepted for publication 14.03.99. [Contents] This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License. |