https://doi.org/10.15407/spqeo3.02.174
PACS: 78.20.- e, 78.40.- q
Calculation of absorption coefficients of InSb1-xBix solid solutions
J.I. Vyklyuk, V.G. Deibuk, I.M. Rarenko
Chernivtsi State University, 274012, Chernivtsi, Kotsyubinskogo 2,
E-mail: vdei@chdu.cv.ua
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 174-177.
Abstract. Using local empirical pseudopotential with spin-orbit interaction taking into account the electron band structure of InSb1-xBix in virtual crystal approximation is calculated. For binary compounds InSb and InBi characteristic gaps between energy bands in high symmetry points of Brillouin zone satisfactorily coincide with known experimental results. Temperature dependencies were calculated using the Brooks-Yu method. A satisfactory coincidence of the band structure of InSb1-xBix, temperature and concentration dependencies with experimental data let us to investigate e1 and e2 dielectrical functions taking into consideration the temperature using integral equations by Kramers-Kronig. Having used them we also calculated an absorption coefficient a both for binary compounds InSb, InBi and for the triple alloy InSb1-xBix. These results correlate well with experimental ones in the area of the fundamental absorption.
Keywords: absorption coefficient, permittivity, solid solution, pseudopotential, band structure.
Paper received 02.12.99; revised manuscript received 27.12.99; accepted for publication 14.03.00.
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