https://doi.org/10.15407/spqeo3.02.178
PACS: 78.55.Fv, - m, 78.60.- b, Ya
The effect of oxygen-containing anions on luminescent properties of CsI
L.N.Shpilinskaya, B.G.Zaslavsky, L.V.Kovaleva, S.I.Vasetsky, A.M.Kudin, A.I.Mitichkin, T.A.Charkina
STC “Institute for Single Crystals”, NAS of Ukraine, Kharkov, Ukraine
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 178-180.
Abstract. It has been found that from the series of oxygen-containing impurities CO32–, SO42–, HCO3–, OH–, IO3–, NO3–, NO2–, CNO–, BO2– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO3) than in CsI(SO4) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO32–-Va+ (395 nm) and the structural one – Va+-Vc- (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed.
Keywords: luminescence, emission centres, cesium iodide, oxygen-containing anions.
Paper received 06.10.99; revised manuscript received 28.11.99; accepted for publication 14.03.00.
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