Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (2), P. 185-190 (2000)
https://doi.org/10.15407/spqeo3.02.185


PACS: 78.20.- e, 78.40.- q, 61.60. Nz

Optical properties and fine faulty structure of sapphire crystals grown in low pressure CO gas atmosphere

V.M.Puzikov, A.Ya.Dan'ko, G.T.Adonkin, N.S.Sidel'nikova,
V.F.Tkachenko, A.T.Budnikov

S.T.Concern “Institute for Single Crystals”, Department of Optical and Constructional Crystals,
National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001, Kharkiv, Ukraine

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 185-190.

Abstract. Presented in this paper are the results of the study of optical characteristics and fine faulty structure of big sapphire crystals grown in a CO-based low pressure (0.1...0.3 torr) gas atmosphere. Optimal conditions for annealing optical elements of such crystals have been determined. They provide high transparency of crystals in the UV region and their high resistance to the UV radiation. A perspectivity of using CO medium for growing big sapphire crystals of high optical and structure quality has been confirmed.

Keywords: optical transparency, light scattering centers, crystal growth, stoichiometry disordering, evaporation.

Paper received 11.10.99; revised manuscript received 29.11.99; accepted for publication 21.03.00.

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