https://doi.org/10.15407/spqeo3.02.195
PACS: 81.05.C, D, E, G, H, 72.80.C, 73.61.C
Specificity of high-pure monocrystalline silicon production for various registering and converting devices
Yu.V.Trubitsyn, S.V. Zverev
State research and design Titanium institute, Ukraine, Zaporozhye.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 195-199.
Abstract. In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping.
Keywords: silicon, monocrystal, detector, floating zone method, neutron-transmutation doping.
Paper received 08.10.99; revised manuscript received 21.12.99; accepted for publication 21.03.00.
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