https://doi.org/10.15407/spqeo3.02.200
PACS: 81.10.- h, Fq, 78.20.- e, 77.84.Fa, 42.88.+ h
Rapidly grown KDP crystals
V.I. Salo
STC “Institute for Single Crystals”, Department of Opt. and Constr. Crystals;
Lenin Ave. 60; 310001 Kharkiv, Ukraine;
Phone: 380(572) 308307; Fax: 380(572) 320019; e-mail: salo@isc.kharkov.com
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 200-202.
Abstract. Results of the study of optical characteristics, real structure and laser damage threshold of KDP crystals rapidly grown in the direction of a prespecified angle of synchronism (q = 59°) are described in the present paper. A comparative analysis of KDP characteristics for crystals grown by conventional method at a rate of 1 mm/day and by the method of oriented growth at a rate of 10 mm/day is presented. It is shown that elaborated method allows to obtain blanks of nonlinear elements already at the stage of growth. The grown crystals have the bulk laser damage threshold on the level of ~5×1010 cm2 and high structure quality; thus it allows to apply them as multipliers of laser radiation frequency.
Keywords: KDP, single crystals, real structure, crystallization parameters, optical absorption, laser damage threshold.
Paper received 19.09.99; revised manuscript received 13.11.99; accepted for publication 21.03.00.
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