Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (2), P. 203-206 (2000)
https://doi.org/10.15407/spqeo3.02.203


PACS: 61.66, 61.10.- i, Nz, 78.40.- q, 77.84.Fa

Effect of growth conditions on structure quality of KDP crystals

V. I. Salo, V. F. Tkachenko, M. I. Kolybayeva, I. M. Pritula

STC “Institute for Single Crystals” Department Dpt. of Opt. and Constr. Crystals;
Street/PO Box: Lenin Ave. 60; Zip/City: 310001 Kharkov Country: Ukraine;
Phone: 380(572) 308307; Fax: 380(572) 320019; email: salo@isc.kharkov.com
email: pritula@isc.kharkov.com

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 203-206.

Abstract. The effect of different variable crystallization parameters (supersaturation, solution acidity, degree of the solution purity, hydrodynamic growth regime) on structural quality and optical homogeneity of KDP crystals grown at the angle of synchronism q = 59° was studied by using X-ray analysis and UV spectroscopy. It is shown that each of the chosen parameters acting in a certain way changes (with the rest being constant) the real structure and optical characteristics of crystals.

Keywords: KDP, single crystals, real structure, crystallization parameters, optical absorption, laser damage threshold.

Paper received 06.10.99; revised manuscript received 19.12.99; accepted for publication 21.03.00.

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