Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (2), P. 207-212 (2000)
https://doi.org/10.15407/spqeo3.02.207


PACS: 78.60.Ya, 78.70.- q

Scintillation characteristics of the single crystalline CdWO4 and Bi4Ge3O12 compounds doped with mercury-like ions

1Yu. Zorenko, 1L.Limarenko, 1I. Konstankevych, 1M. Pashkovsky, 1Z. Moroz,
2I. Solsky, 3B. Grinev, 3V. Nekrasov, 3Yu. Borodenko

1-Institute of Applied Physics Lviv State University, 49 Gen. Chuprynka Str., Lviv, 79044, Ukraine
ph./fax +380 (322) 353475, E-mail: zorenko@iap.franko.lviv.ua;
2-Researcg Production Association “Carat”, 202 Stryjska Str., Lviv 79031, Ukraine;
3-Institute for Single Crytals of National Academy of Science, Kharkiv, Ukraine

 Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 2. P. 207-212..

Abstract. Investigated are optical, luminescent and light-technical properties of the CdWO4 and Bi4Ge3O12 single crystals doped with mercury-like Bi3+ and Pb2+ impurities, respectively, with the aim of assertaining the possibility to match their spectral characteristics with a spectral sensitivity of semiconductor radiation detectors. It is established that the long-wave shift of the CdWO4:Bi emission spectra and increase of the light yield in the sensitivity region of Si-PD up to 15-20% in comparison with this parameter for the CdWO4, occuring at optimal level of the activator concentration 0.025–0.25 mass% Bi2O3 in the melt and contens of Li+ or Ag+ ions as compensators for providing the ratio of mentioned impurities not less than 1:(1.5¸3), is connected with emission of the (BiO69-) complexes with lmax = 560 nm and t = 0.8-4.2 ms at 300 K. The shift of the emission spectra of the Bi4Ge3O12:Pb crystals into the red spectral region is caused by emission of the (PbO610-) complexes in the bands with lmax = 570 and 690 nm and t = 1.0 ms. In addition, the light yield of the Bi4Ge3O12:Pb single crystals at impurity concentrations of 0.005–0.5 mass% PbO in the melt was not less than 1.0–0.8 in comparison with that of undoped analogs.

Keywords: single crystal, scintillator, impurity, defects, light yield, decay time, photodiode.

Paper received 10.10.99; revised manuscript received 06.12.99; accepted for publication 21.03.00.

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