https://doi.org/10.15407/spqeo4.02.075
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 2. P. 75-81.
PACS: 68.35, 72.20.J, 73.20, 73.40,85.30.T
Effect of oxide-semiconductor interface traps on
low-temperature operation of MOSFETs
V.S. Lysenko *, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
Prospect Nauki 45, Kiev 03028, Ukraine
Abstract. Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO2 interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation
Keywords: low temperature, MOS transistor, hysteresis, shallow traps.
Paper received 15.11.00; revised manuscript received 16.12.00; accepted for publication 16.02.01.
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