Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 075-081 (2001).
Increase of planar homogeneity of multi-silicon structures by gettering treatments V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 082-084 (2001).
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F.Lastovetsky, V.I. Sugakov, V.K. Dubovy
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 085-090 (2001).
Short-wave photodetectors based on fine grain-sized poly-Si films F.G. Agaev
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 091-092 (2001).
Technology and experimental studies of contacts for microwave diodes based on interstitial phases N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 093-105 (2001).
Features of conduction electrons motion in the field of coherent light beams O.Yu. Semchuk, M. Willander, M. Karlsteen
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 106-110 (2001).
Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers A.V. Stronski
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 111-117 (2001).
X-ray characterization of ZnSe single crystals doped with Mg A.G. Fedorov, Yu.A. Zagoruiko, O.A. Fedorenko, N.O. Kovalenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 118-122 (2001).
Influence of plasticizer structure on stability of polystyrene scintillators optical characteristics V.G. Senchishin, A.Yu. Borisenko, V.D. Titskaja, V.S. Koba, V.N. Lebedev, A.F. Adadurov, V.N. Osadchenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 123-125 (2001).
GSO: Ce3+ scintillator with a high energy resolution V.G. Bondar', V.P. Gavrilyuk, V.S. Konevskii, E.V. Krivonosov, V.P. Martynov, Yu.N. Savvin
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 131-133 (2001).
Spectral properties of reflective interference filters V.Yu. Pervak, L.V. Poperenko, Yu.A. Pervak
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 134-138 (2001).
IR spectroscopy of KBr salt and crystals V.I. Goriletsky, A.I. Mitichkin, L.E. Belenko, T.P. Rebrova
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 139-141 (2001).
Photoluminescence of pentacene solutions in n-pentyl-nў-cyanobiphenyl Yu. Piryatinskiy, M. Furier, V. Nazarenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (2), P. 142-145 (2001).