https://doi.org/10.15407/spqeo4.02.091
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 2. P. 91-92.
PACS: 85.60.D
Short-wave photodetectors based on
fine grain-sized poly-Si films
F.G. Agaev
Azerbaijan National Aerospace Agency Baku, 370159, Azerbaijan
Abstract. Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries.
Keywords: polysilicon films, photodetector, spectral sensitivity.
Paper received 28.12.00; revised manuscript received 21.01.01; accepted for publication 16.02.01.
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