emiconductor Physics, Quantum Electronics & Optoelectronics, 5 (2), P. 170-175 (2002)
https://doi.org/10.15407/spqeo5.02.170


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 170-175.

PACS: 72.20.D, 84.60.J, 61.72.Dd, 61.72.Mm, 68.35.Bs

Recrystallization processes in screen-printed CdS films

V.P. Klad’ko, O.S. Lytvyn, P.M. Lytvyn, N.M. Osipenok, G.S. Pekar,
I.V. Prokopenko, A.F. Singaevsky, A.A. Korchevoy

Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine.
Phone: +380 (44) 265 5940; e-mail: plyt@isp.kieua,

Abstract. Kinetics of recrystallization in screen-printed polycrystalline CdS films has been investigated by X-ray structure analysis and optical microscopy. The relation between the crystallite size, crystallite orientation and the macrostrain, as well as their dependence on heat treatment regimes is established. It is shown that single-phase CdS films having a thickness of some tens microns, large grain size and low residual strain can be produced at optimum technological regimes. The films obtained are suitable for fabrication of CdS/CdTe solar cells.

Keywords: CdS film, screen printing, structural perfection, recrystallization, solar cell

Paper received 17.05.02; revised manuscript received 03.06.02; accepted for publication 25.06.02.


Full text in PDF (Portable Document Format)  [PDF 781K]

Back to Volume 5 N2

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.