Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 180-182.

PACS: 73.40.K, 73.40.C

Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures

R.V. Konakova, V.V. Milenin, M.A. Stovpovoi

Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone.: +380 (44) 265-6182; fax: +380 (44) 265-8342; e-mail: konakova@isp.kiev.ua

Abstract. The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions.

Keywords: ohmic contact, contact resistance, GaAs-AlGaAs heterostructure.

Paper received 13.03.02; revised manuscript received 20.05.02; accepted for publication 25.06.02.

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