Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 183-187.

PACS: 68.65.A

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production
of transmission lines

N.S. Boltovets¹⁾, G.N. Kashin²⁾, R.V. Konakova²⁾, V.G. Lyapin²⁾, V.V. Milenin²⁾,
E.A. Soloviev²⁾

1)State Scientific & Research Institute “Orion”, 8a Eugene Pottier St., 03057 Kiev, Ukraine
E-mail: bms@i.kiev.ua
2)Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kiev, Ukraine
Phone.: +(380) 44 265-61-82; fax: +(380) 44 265-83-42; e-mail: konakova@isp.kiev.ua

Abstract. We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation in oxygen, (ii) high-temperature tetraethoxysilane decomposition, (iii) high-frequency cathode sputtering of quartz in argon plasma, and (iv) electron-beam evaporation of quartz in a vacuum. The SiO2 films obtained using monosilane oxidation or electron-beam evaporation of quartz demonstrated better properties. For the Au-Ti-SiO₂-GaAs structures a layer structure transformation was shown to occur, with formation of TiO_x-SiO2 junction and gold atoms penetration over the whole adhesion layer thickness. The microwave oscillator modules made using the Au-Ti-SiO₂-GaAs (Si) structures demonstrated output power of 10-60 mW in the 8 mm wavelength range.

Keywords: microwave diode, oscillator module, interface between phases, SiO₂-GaAs layer structure, Au-Ti-SiO2-GaAs multilayer structure.

Paper received 13.03.02; revised manuscript received 24.05.02; accepted for publication 25.06.02.

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