References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 5 (2) P. 183-187 (2002).

References

1. N.A. Kolobov, M.M. Samokhvalov, Diffusion and Oxidation of Semiconductors, Metallurgiya, Moscow (1975) (in Russian).

2. GaAs Microelectronics (VLSI Electronics Microstructure Science, v. 11), Eds. N.G. Einspruch, W.R. Wisseman, Academic Press, New York (1985).

3. S.A. Vasilíkovskii, I. Ivancho, Raman spectroscopy investigation of the effect of SiO2, Si3N4 insulation films deposition and low doses of g-irradiation on the GaAs near-surface region // Zhurn. Tekhn. Fiz., 63(6), pp. 80-86 (1993) (in Russian).

4. J. Breza, P.I. Didenko, R.V. Konakova, V.V. Milenin, G.F.Romanova, Effect of g-irradiation on the properties of SiO2-GaAs structures // Zhurn. Tekhn. Fiz., 65(5), pp. 122-131(1995) (in Russian).

5. V.I. Gavrilenko, A.M. Grekhov, D.V. Korbutyak, V.G.Litovchenko, Optical Properties of Semiconductors(A Hand-book), Naukova Dumka, Kiev (1987) (in Russian).

6. V.I. Perelíman, A Concise Handbook for Chemists, State Chemical Publ., Moscow (1963) (in Russian).