1. N.A. Kolobov, M.M. Samokhvalov, Diffusion and Oxidation of Semiconductors, Metallurgiya, Moscow (1975) (in Russian). | | 2. GaAs Microelectronics (VLSI Electronics Microstructure Science, v. 11), Eds. N.G. Einspruch, W.R. Wisseman, Academic Press, New York (1985). | | 3. S.A. VasilГkovskii, I. Ivancho, Raman spectroscopy investigation of the effect of SiO2, Si3N4 insulation films deposition and low doses of g-irradiation on the GaAs near-surface region // Zhurn. Tekhn. Fiz., 63(6), pp. 80-86 (1993) (in Russian). | | 4. J. Breza, P.I. Didenko, R.V. Konakova, V.V. Milenin, G.F.Romanova, Effect of g-irradiation on the properties of SiO2-GaAs structures // Zhurn. Tekhn. Fiz., 65(5), pp. 122-131(1995) (in Russian). | | 5. V.I. Gavrilenko, A.M. Grekhov, D.V. Korbutyak, V.G.Litovchenko, Optical Properties of Semiconductors(A Hand-book), Naukova Dumka, Kiev (1987) (in Russian). | | 6. V.I. PerelГman, A Concise Handbook for Chemists, State Chemical Publ., Moscow (1963) (in Russian). | |
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