https://doi.org/10.15407/spqeo6.02.111
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 111-114.
PACS: 61.72.Tt, 61.80.-x
Thermodonor activation energy
and mechanisms of tensoeffects in transmutation-doped g-irradiated
silicon
Yu.P. Dotsenko1,
V.M. Ermakov1,
A.E Gorin1,
V.I. Khivrych2,
V.V. Kolomoets1,
V.F. Machulin1,
L.I. Panasjuk4,
I.V. Prokopenko1,
B.B. Sus'3.
E.F. Venger1
1 Institute of Semiconductor Physics, NAS
of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6280; fax: +38(044) 265 6391; e-mail: kolomoe@class.semicond.kiev.ua
2 Institute of Nuclear Physics, NAS of Ukraine, 47 prospect Nauky, 03028
Kyiv, Ukraine
3 National Taras Shevchenko University of Kyiv, 64 Volodymyrska Street,
01033 Kyiv, Ukraine
4 Institute of Physics, NAS of Ukraine, 46 prospect Nauky, 03028 Kyiv,
Ukraine
Phone: +38(044) 266 1073; e-mail: suse@univ.kiev.ua
Abstract. Activation energy of high temperature technological thermodonors (TD)
has been determined in transmutation-doped n-Si(P) using the data analysis
of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects
in n-Si(P) crystals doped by neutron irradiation and doped at growth were
studied by the tensoeffects measurements and by analysis of the pressure
dependencies of the electron concentration ratio in "upper"
and "lower" L1-valleys
of uniaxially strained samples. Comparison of the some parameters for
the crystals doped either by neutron transmutation method or in the melt
is carried out.
Keywords: silicon,
transmutation doping, thermodonors, gamma-irradiation.
Paper received 04.03.03; accepted for publication
16.06.03.
Download full text in PDF [PDF 191K
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.