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Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N4 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 6 N 2
https://doi.org/10.15407/spqeo6.02

Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped g-irradiated silicon
Yu.P. Dotsenko, V.M. Ermakov, A.E. Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus'. E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 111-114 (2003).

Chemical bonding and optical bowing in III-nitrides solid solutions
O.V. Voznyy, V.G. Deibuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 115-120 (2003).

Analysis of luminescence method applicability for determination of Cd1-xZnxTe composition
K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 121-128 (2003).

Ion induced field effect in silicon in nematic liquid crystal cell
M.I. Gritsenko, S.I. Kucheev
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 129-133 (2003).

Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals
Yu.I. Zhirko, I.P. Zharkov
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 134-140 (2003).

Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium
P.A. Gentsar, L.A. Matveeva, A.A. Kudryavtsev, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 141-146 (2003).

Evolution of defective structure of the irradiated silicon during natural ageing
I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 147-152 (2003).

Growing Cd1-x-yMnyHgxTe single crystals and their optoelectronic properties
S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 153-155 (2003).

Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field
B.A. Lukiyanets
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 156-159 (2003).

Characterization of CdTe+Mn crystals depending on doping procedure
E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 160-163 (2003).

Investigation of the optical and acoustical phonon modes in Si1-xGex QD SLs
V.N. Dzhagan, Z.F. Krasil'nik, P.M. Lytvyn, A.V. Novikov, M.Ya. Valakh, V.O. Yukhymchuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 164-168 (2003).

Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 169-171 (2003).

Characteristics of confined exciton states in silicon quantum wires
D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 172-182 (2003).

Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations
L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 183-188 (2003).

Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures
D. I. Bletskan, O. R. Lukyanchuk, O. D. Bletskan
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 189-191 (2003).

Photovoltage and photocurrent spectroscopy of luminescent porous silicon
O.V. Vakulenko, S.V. Kondratenko
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 192-196 (2003).

High efficient solar cells and modules based on diamond-like carbon film - multicrystalline Si structures
N.I. Klyui, O.B. Korneta, V.P. Kostylyov, V.G. Litovchenko, A.V. Makarov, V.N. Dikusha, L.V. Neselevska, V.I. Gorbulik
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 197-201 (2003).

Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
S.K. Abdizhaliev, K.A. Ismailov, A.B. Kamalov, Ya.Ya. Kudrik
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 202-204 (2003).

On thermal emission of small-sized radiator
E.A. Salkov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 205-209 (2003).

Polarization and angular peculiarities of IR emission of thin film semiconductor structures
O.G. Kollyukh, A.I. Liptuga, V.O. Morozhenko, V.I. Pipa
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 210-213 (2003).

Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
N.V. Malushin, V.M. Skobeeva, V.A. Smyntyna
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 214-216 (2003).

Effect of constant electric field on electronic absorption spectra of dye-doped amorphous polymer films
N.A. Davidenko, N.G. Chuprin, M.A. Zabolotny, N.A. Derevyanko, A.A. Ishchenko
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 217-222 (2003).

Ultrasound influence on exciton emission of GaP light diodes
O.M. Gontaruk,V.I. Khivrych, M.B. Pinkovska, V.P. Tartachnyk, Ya.M. Olikh, R.M. Vernydub, V.Ya. Opilat
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 223-226 (2003).

Studies of CdHgTe as a material for x- and g-ray detectors
L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 227-232 (2003).

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors
Yu.M. Shwarts, V.N. Sokolov, M.M. Shwarts, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 233-237 (2003).

Dielectric response of disordered ferroelectrics with embedded charged clusters
A.N. Morozovska, E.A. Eliseev, V.V. Obukhovsky
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 238-248 (2003).

Synthesis recording and metrology of laser beams with phase singularities
A.A. Ivanovskyy, I.V. Basistiy, M.S. Soskin
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 249-253 (2003).

Detection and metrology of optical vortex helical wave fronts
G.V. Bogatiryova, M.S. Soskin
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 254-258 (2003).

Electric properties of metal-organic lyotropic liquid crystals
G.V. Klimusheva, A.V. Koval'chuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 259-263 (2003).

One-dimensional warm electron transport in GaN quantum well wires at low temperatures
S.K. Sarkar
Semiconductor physics, quantum electronics and optoelectronics, 6 (2), P. 264-268 (2003).

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This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

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