https://doi.org/10.15407/spqeo6.02.141
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 141-146.
PACS: 78.20.Jq, 78.40.Fy,
78.68.+m
Effects of interband phototunneling
and filling the bands in electroreflectance spectra of germanium
P.A. Gentsar, L.A. Matveeva, A.A. Kudryavtsev,
E.F. Venger
Institute of Semiconductor Physics, NAS
of Ukraine, 41 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38 (044) 265 8338
Abstract. Electroreflectance spectra of chemically etched (110) surface of intrinsic
germanium are measured in the range of E1,
E1 + D1 transitions for ||[100] and ||[10] directions of the polarization vector.
Separated are isotropic (surface) and anisotropic (bulk) electroreflectance
components. The spectrum of the bulk electroreflectance component (the
Keldysh-Franz effect), as it can be deduced from its phase, corresponds
to the case when energy bands are bent up if going to the surface. This
situation is possible in the conditions of filling the bands only at presence
of an extremum in the semiconductor energy scheme. Appearance of this
extremum can be related to the fact that the electron wave function at
the surface is equal to zero or defermined by mirror image force action.
Keywords:
electroreflection, Keldysh-Franz effect, band filling, mirror image force.
Paper received 26.02.03; accepted for publication
16.06.03.
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