Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 153-155.

Growing Cd1-x-yMnyHgxTe single crystals and their optoelectronic properties
S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk

Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubynskogo str., 58012 Chernivtsi, Ukraine
phone: +38(0372) 58 4753, fax: +38(0372) 552914, e-mail: parsu@chnu.cv.ua

Abstract. Single crystals of Cd1-x-yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1 1019 cm-3) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 mm spectral range. In order to understand the nature of it the energy diagram of vanadium levels has been considered. The band gap of the studied solid solutions with different manganese content has been found from the absorption coefficient spectra and compared with those calculated.

Keywords: manganese, Bridgman method, semi-imsulating materials, transmission, band gap.
Paper received 11.12.02; revised manuscript received 22.05.03; accepted for publication 16.06.03.

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