https://doi.org/10.15407/spqeo6.02.164
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 164-168.
PACS: 63.22.+m, 68.37.Ps, 68.65.Hb, 72.10.Di
Investigation of the optical
and acoustical phonon modes in Si1-xGex QD SLs
V.N. Dzhagan1,
Z.F. Krasil'nik2,
P.M. Lytvyn1,
A.V. Novikov2,
M.Ya. Valakh1,
V.O. Yukhymchuk1
1Institute of Semiconductor Physics, NAS
of Ukraine, 03028 Kyiv, Ukraine
2Institute of Microstructure Physics, RAS, 603600 Nizhny Novgorod, GSP-105,
Russia
E-mail: valakh@semicond.kiev.ua
Abstract. Single- and multilayer structures with Si1-xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both structures. For multilayer structure a low-frequency Raman spectrum was obtained due to the scattering on folded acoustical phonons. The experimental values of the peaks are compared with those derived theoretically.
Keywords:
QD, Raman scattering, AFM.
Paper received 12.02.03; accepted for publication
16.06.03.
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