https://doi.org/10.15407/spqeo6.02.169
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 169-171.
PACS: 78.55.Et; 78.67.Hc; 71.55.Gs
Enhancement of CdSSe QD exciton luminescence
efficiency by hydrogen RF plasma treatment
V.P. Kunets, N.R. Kulish, V.V. Strelchuk,
A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa
Institute of Semiconductor Physics, NAS
of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38 (044) 2656282; Fax: +38 (044) 2658342; E-mail: vl_kunets@yahoo.com
Abstract. We report an enhancement of exciton luminescence in CdSxSe1-x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.
Keywords:
quantum dots, photoluminescence, surface passivation, RF plasma treatment.
Paper received 25.02.03; accepted for publication
16.06.03.
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