https://doi.org/10.15407/spqeo6.02.183
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 183-188.
PACS: 02.70.Uu, 61.43.Bn
Topography of Si epitaxial
monolayers obtained on Si (001) substrate by computer simulations
L. Pyziak1,
W. Obermayr2,
K. Zembrowska1,
M. Kuzma1
1Institute of Physics, University of Rzeszow,
35-310 Rzeszow, Rejtana 16a, Poland
2Technikum Joanneum Gmbh, Alte Poststrasse 149, A-8020 Graz, Austria
Phone: +48(17) 862 5628; fax: +48(17) 852 26792; e-mail: lpyziak@univ.rzeszow.pl
Abstract.
Fractal analysis was used for the description of the geometry of the clusters
formed within the Monte Carlo simulation of the first monolayer growth
on Si substrate. Pulse laser deposition method was assumed for the epitaxy.
Layers were obtained for various substrate temperatures varying in the
range from 600 K to 800 K. The topography of plane clusters formed were
characterised by their fractal box-like dimension. The relation between
this dimension and the shape of the clusters was addressed.
Keywords: silicon, epitaxial monolayer, Monte Carlo simulation, fractal characterisation.
Paper received 28.01.03; accepted for publication
16.06.03.
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