https://doi.org/10.15407/spqeo6.02.192
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 192-196.
PACS: 72.40.+w
Photovoltage and photocurrent
spectroscopy of luminescent porous silicon
O.V. Vakulenko, S.V. Kondratenko
National Taras Shevchenko Univiversity of Kyiv, 6 Glushkova Ave., 03022
Kyiv, Ukraine
e-mail: kondr@univ.kiev.ua
Abstract. Measurements of photoconductivity, photovoltage and photoluminescence
spectra of porous silicon/c-Si structures are carried out. It is shown
that the shape of the photoconductivity and photovoltage spectra is caused
mainly by bulk properties of porous silicon. Two components of the photovoltage
spectral dependence caused by porous silicon are observed. On the contrary,
the one photoconductivity component is revealed. Moreover, the photoconductivity
spectrum shape is found to depend on the value of the bias voltage and
differ from the photovoltage spectrum in the short-wave region. The obtained
results are explained within the model where the por-Si is considered
as composite system of crystallites embedded in amourphous matrix of silicon
compounds.
Keywords:
photoconductivity, photovoltage, porous silicon.
Paper received 09.04.03; accepted for publication
16.06.03.
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