Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 202-204.

PACS: 84.40.-x

Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
S.K. Abdizhaliev1, K.A. Ismailov1, A.B. Kamalov2, Ya.Ya. Kudrik2

1 Karakalpak Berdakh State University, 1 Universitetskaya st., 742012 Nukus, Uzbekistan
2 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6182; fax: +38(044) 265 8342; e-mail: konakova@isp.kiev.ua

Abstract. We studied I-V curves of Au-TiBx-n-n+-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm2, duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration. It was shown that microwave treatments whose duration are up to 20 s do not impair the main structure parameters, while those with duration of 0.5-10 s may even improve these parameters.

Keywords: microwave treatment, surface-barrier structures, gallium arsenide, silicon carbide.
Paper received 11.02.03; accepted for publication 16.06.03.

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