Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 214-216.

PACS: 78.60.-b, 78.66.-w

Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
N.V. Malushin, V.M. Skobeeva, V.A. Smyntyna

Odessa National I.I. Mechnikov University, Research Institute of Physics, 2 Dvoryanskaya str. ONU, 65026 Odessa, Ukraine
Phone: +38(482) 23 0329

Abstract. Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (l max = 650 nm) is offered. According to this model, during quenching luminescence, the centers of a luminescence and those of the majority carriers capture participate. Determined are the values of the activation energy and concentration of the appropriate centers at which abnormal dependence of luminescence intensity on the temperature is observed.

Keywords: luminescence, quenching, centre of luminescence, centre of capture, temperature dependence.
Paper received 11.02.03; accepted for publication 16.06.03.

Download full text in PDF  [PDF 156K

References

Back to Volume 6 N2

This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.