Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 238-248.

PACS: 77.80.-e

Dielectric response of disordered ferroelectrics with embedded charged clusters
A.N. Morozovska1, E.A. Eliseev2, V.V. Obukhovsky1

1 Taras Shevchenko Kiev University, Radiophysical Department, 64 Volodymyrs'ka str., 01033 Kyiv, Ukraine
E-mail: morozo@mail.i.com.ua, obukhovsky@univ.kiev.ua.
2 Institute for Materials Science, NAS of Ukraine, 3 Krjijanovskogo, 03142 Kyiv, Ukraine

Abstract. The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified Landau-Ginzburg-Devonshire equation can be applied to the bulk ferroelectric materials with improper conductivity and movable charge fluctuations near the impurity centers.

Keywords: disordered ferroelectrics, diffuse phase transition, charged defects.
Paper received 11.04.03; accepted for publication 16.06.03.

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