Semiconductor Physics, Quantum Electronics and Optoelectronics, 6 (2) P. 121-128 (2003).
References
1. J.L. Reno, E.D. Jones, Determination of the dependence of the band-gap energy on composition for Cd1-xZnxTe // Phys.Rev. B, 45(3), pp. 1440-1442 (1992). https://doi.org/10.1103/PhysRevB.45.1440
2. T. Taguchi, Crystal growth and neutral acceptor - bound exciton emission of ZnCdTe by THM with Te solvent // Phys.stat. sol.(a), 77 (2), pp. K115-K119 (1983). https://doi.org/10.1002/pssa.2210770256
3. K.Oettinger, D.M.Hofmann, Al.L.Efros et all., Excitonic line broadening in bulk grown Cd1-xZnxTe // J.Appl.Phys., 71(9),pp. 4523-4526 (1992). https://doi.org/10.1063/1.350798
4. D.J. Olego, J.P. Faurie, S. Sivananthan, P.M. Raccah., Optoelectronic properties of Cd1-xZnxTe films grown by molecular-beam epitaxy on GaAs substrates // Appl. Phys. Lett.,47(11), pp. 1172-1174 (1985). https://doi.org/10.1063/1.96316
5. S.M. Jonson, S. Sen, W.H. Konkel, M.H. Kalisher, Optical technique for composition measurement of bulk and thin-film Cd1-xZnxTe // J. Vac. Sci. Technol. B, 9(3), pp.1897-1901 (1991). https://doi.org/10.1063/1.41071
6. J.Gonzalez-Hermandez, O.Zelaya, J.G.Mendoza-Alvarez et all., Structure and optical characterization of ZnxCd1-xTe thin films prepared by the closed spaced vapor transport method // J. Vac. Sci. Technol. A, 9(3), pp. 550-553 (1991). https://doi.org/10.1116/1.577407
7. S.P. Tobin, J.P. Tower, P.W.Norton et al., A comparizon of techniques for nondestructive composition measurements in CdZnTe substrates // J. Electr. Mater. 24(5), pp.697-705 (1995). https://doi.org/10.1007/BF02657981
8. F.G. Sanches-Almazam, H. Navarro-Conteras, G. Ramirez-Flores et al. Temperature dependence of the band gap of Cd1-xZnxTe alloys of low zinc concentrations // J. Appl. Phys.79(10), pp. 7713-7717 (1998). https://doi.org/10.1063/1.362374
10. N. Magnea, F. Dal'bo, J.L. Pautrat et al., Molecular beam epitaxial growth of Cd1-xZnxTe matched to HgCdTe alloys // Mat. Res. Soc. Symp. Proc.90, pp. 455-462 (1987). https://doi.org/10.1557/PROC-90-455
11. J. Franc, P. Hlidek, P. Moravec et al., Determination of energy gap in Cd1-xZnxTe (x= 0-0.06) // Semic. Sci. Technol.,15(6), pp.561-564 (2000). https://doi.org/10.1088/0268-1242/15/6/313
12. J. Lee, N.C. Giles, D. Rajavel, C.J. Summers. Room temperature band-edge photoluminescence from cadmium telluride // Phys. Rev. B, 49(3), pp. 1668-1676 (1994). https://doi.org/10.1103/PhysRevB.49.1668
13. J.E. Toney, B.A. Brunett, T.E. Schlesinger et al., Uniformity of Cd1-xZnxTe grown by high-pressure Bridgman // Nucl.Instrum. and Methods in Phys. Research A, 380(1-2), pp. 132-135 (1996). https://doi.org/10.1016/S0168-9002(96)00373-7
14. F.P. Doty, J.F.ÅButtler, J.F.ÅSchetzina, R.A. Bowers. Properties of Cd1-xZnxTe crystals grown by a high-pressure Bridgman method // J. Vac. Sci. Technol. B, 10(4), pp.1418-1422 (1992). https://doi.org/10.1116/1.586264
15. E. Rzepka, A. Lusson, A. Riviere et al., Defects study by photoluminescence and cathodoluminescence in vanadium doped CdZnTe // J. Crystal Growth, 161 (1-4), pp. 286-291(1996). https://doi.org/10.1016/0022-0248(95)00672-9
16. M. Fiederle, T. Feltgen, J. Meinhardt et al., State of the art of (Cd,Zn)Te as gamma detector // J. Crystal Growth, 197(3),pp.635-640 (1999). https://doi.org/10.1016/S0022-0248(98)00761-1
17. A. Zumbiehl, S. Mergui, M. Ayoub et al., Compensation origins in II-VI CZT materials // Mater. Sci. Engineer. B, 71(1-3),pp.297-300 (2000). https://doi.org/10.1016/S0921-5107(99)00394-3
18. K. Suzuki, S. Seto, T. Sawada et al., Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method // J. Electronic Mater., 30 (6), pp. 603-607 (2001). https://doi.org/10.1007/BF02665841
19. W. Stadler, D.M. Hofmann, H.C. Alt et al., Optical investigations of defects in Cd1-xZnxTe // Phys. Rev. B, 51(16),pp.10619-10630 (1995). https://doi.org/10.1103/PhysRevB.51.10619
20. J. Franc, E. Belas, A.L. Toth et al., Diffusion length of minority carriers in (CdZn)Te and (HgCd)Te single crystals measured by EBIC method // J.Crystal Growth, 197(3),pp. 593-598 (1999). https://doi.org/10.1016/S0022-0248(98)00772-6
21. J.J. Perez Bueno, M.E. Rodriquez et al., Growth and characterization of Cd1-xZnxTe crystals with high zinc concentrations // J. Crystal Growth, 209 (4), pp.701-708 (2000). https://doi.org/10.1016/S0022-0248(99)00514-X
22. Z.F. Li, W. Lu, G.S. Huang, et al., Microphotoluminescence mapping on CdZnTe:Zn distribution // J. Appl. Phys.90(1),pp. 260-264 (2001). https://doi.org/10.1063/1.1378062
23. T.E. Schlesinger, J.E. Toney, H. Yoon et al., Cadmium zinc telluride and its use as a nuclear radiation detector material // Mater. Sci. Engineer. R, 32(4-5), pp.103-189 (2001). https://doi.org/10.1016/S0927-796X(01)00027-4
25. K.D. Glinchuk, A.V. Prokhorovich, Pecularities of determination of the shallow impurity concentration in semiconductors from the analysis of the exciton luminescence // Fiz.Technic. Poluprov. 36(5), pp. 519-524 (2002) (in Russian). https://doi.org/10.1134/1.1478536
26. K.D. Glinchuk, A.V. Prokhorovich, Pecularities of determination of the shallow impurity concentration in semiconductors from the analysis of the edge luminescence // Fiz. Technic. Poluprov, 37(2), pp.159-165 (2003) (in Russian). https://doi.org/10.1134/1.1548655
27. V.I. Gavrilenko, A.M. Grehov, D.V. Korbuytak, V.G. Litovchenko, Optical properties of semiconductors. Naukova Dumka, Kyiv (1987) (in Russian).
28. D.V. Korbutjak, S.G. Krylyuk, Yu.V. Kryuchenko, N.D. Vakhnjak, Pecularities of photoluminescence of compensated CdTe:Cl monocrystals // Optoelectronics and semiconductor technics, 37, pp. 23-40 (2002) (in Ukrainian).
29. A.P. Levanyuk, V.V. Osipov, Edge luminescence of the direct-gap semiconductors // Uspekhi phys. nauk.133(3),pp. 427-477 (1981) (in Russian). https://doi.org/10.3367/UFNr.0133.198103b.0427
30. L. Pavesi, M. Guzzi, Photoluminescence of AlxGa1-xAs alloys // J. Appl. Phys.75(10), pp. 4779-4842 (1994). https://doi.org/10.1063/1.355769
31. N.C. Giles-Taylor, R.N. Bicknell, D.K. Blanks et al., Photoluminescence of CdTe: A comparison of bulk and epitaxial material // J. Vac. Sci. Technol. A, 3(1), pp.76-82 (1985). https://doi.org/10.1116/1.573250
32. W.M. Duncan, R.J. Koestner, J.H.Tregilgas et al. Non-destructive compositional and defect characterization of CdZnTe alloys using photoluminescence spectroscopy // Mat.Res.Soc.Symp.Proc.161, pp. 39-44 (1990). https://doi.org/10.1557/PROC-161-39
33. K.P. Rao, O.Md. Hussain, K.T.R. Reddy et al. Characterization of two-source evaporated cadmium zinc telluride thin films // Optical Mater.5 (1), pp. 63-68 (1996). https://doi.org/10.1016/0925-3467(95)00041-0
34. J. Yang, Y. Zidon, Y. Shapira. Alloy composition and electronic structure of Cd1-xZnxTe by surface photovoltage spectroscopy // J.Appl.Phys.91(2), pp. 703-707 (2002). https://doi.org/10.1063/1.1425071